PART |
Description |
Maker |
FMMT634 |
“SuperSOT SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR
|
Diodes Incorporated Zetex Semiconductors
|
FMB5551_04 FMB5551 FMB555104 |
NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package
|
FAIRCHILD[Fairchild Semiconductor]
|
ENA0411A |
Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single PCP
|
ON Semiconductor
|
NTE19 NTE18 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | SIP TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | SIP Silicon Complementary Transistors High Voltage, High Current Capacity Driver
|
NTE[NTE Electronics]
|
2SC3710AO 2SC3710AY |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C) | TO-220AB SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
|
2SD2655 2SD655 |
Silicon NPN Transistor Silicon NPN Epitaxial Planer Low Frequency Power Amplifier TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor TOSHIBA[Toshiba Semiconductor] Rohm
|
2SC4703 2SC4703NE46234 2SC4703SH |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits BJT
|
NEC[NEC] NEC Corp.
|
2SC5623 |
SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER Silicon NPN Transistor
|
HITACHI[Hitachi Semiconductor]
|
UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC] NEC Corp.
|
BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|